Optoelectronic characteristics of a-SiC:H-based P-I-N thin-film light-emitting diodes with low-resistance and high-reflectance N+-a-SiCGe:H layer

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Natl Central Univ, Chungli, Taiwan [1 ]
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IEEE Trans Electron Devices | / 9卷 / 1360-1366期
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Manuscript received November 11; 1996; revised March 31; 1997. The review of this paper was arranged by Editor C.-Y. Lu. This work was supported by the National Science Council of the R.O.C. under Contract NSC83-0417-E008-014;
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