NEW OPEN DIFFUSION TECHNIQUE USING EVAPORATED Zn3P2 AND ITS APPLICATION TO A LATERAL p-n-p TRANSISTOR.

被引：0
|
作者：
Schmitt, Felix [1 ]
Li Man Su [1 ]
Franke, Dieter [1 ]
Kaumanns, Roland [1 ]
机构：
[1] Heinrich-Hertz-Inst fuer, Nachrichtentechnik Berlin GmbH,, Integrated Optics Div, Berlin, West, Heinrich-Hertz-Inst fuer Nachrichtentechnik Berlin GmbH, Integrated Optics Div, Berlin, West Ger
来源：
| 1600年 / ED-31期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
TRANSISTORS
引用
收藏
相关论文
共 50 条
  • [41] Fabrication of a p–n Heterojunction Using Topological Insulator Bi2Te3–Si and Its Annealing Response
    Faizan Ahmad
    Rashmi Singh
    Prasanna Kumar Misra
    Naresh Kumar
    Rachna Kumar
    Pramod Kumar
    Journal of Electronic Materials, 2018, 47 : 6972 - 6983
  • [42] Structural, optical and electrical properties of Ru doped MoO3 thin films and its P-N diode application by JNS pyrolysis technique
    Balaji, M.
    Chandrasekaran, J.
    Raja, M.
    Rajesh, S.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2016, 27 (11) : 11646 - 11658
  • [43] Preparation of P-g-C3N4-WS2 nanocomposite and its application in photoelectrochemical detection of 5-formylcytosine
    Li, Fei
    Yin, Huanshun
    Chen, Yan
    Wang, Siyu
    Li, Jingyan
    Zhang, Yuemei
    Li, Chunxiao
    Ai, Shiyun
    JOURNAL OF COLLOID AND INTERFACE SCIENCE, 2020, 561 : 348 - 357
  • [44] Preparation of P-g-C3N4-WS2 nanocomposite and its application in photoelectrochemical detection of 5-formylcytosine
    Li, Fei
    Yin, Huanshun
    Chen, Yan
    Wang, Siyu
    Li, Jingyan
    Zhang, Yuemei
    Li, Chunxiao
    Ai, Shiyun
    Journal of Colloid and Interface Science, 2020, 561 : 348 - 357
  • [45] Fabrication of a p-n Heterojunction Using Topological Insulator Bi2Te3-Si and Its Annealing Response
    Ahmad, Faizan
    Singh, Rashmi
    Misra, Prasanna Kumar
    Kumar, Naresh
    Kumar, Rachna
    Kumar, Pramod
    JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (12) : 6972 - 6983
  • [46] A NEW TECHNIQUE FOR FABRICATION OF OEIC - THE ETCHED BACK PLANAR PROCESS - AND ITS APPLICATION TO THE FABRICATION OF PLANAR EMBEDDED INP-INGAAS P-I-N-PHOTODIODES
    SHIMIZU, J
    INOMOTO, Y
    KIDA, N
    TERAKADO, T
    SUZUKI, A
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (10) : 721 - 723
  • [47] Resistance pressing sintering: A simple, economical and practical technique and its application to p-type (Bi,Sb)2Te3 thermoelectric materials
    Fan, Xi'an
    Cai, Xinzhi
    Rong, Zhenzhou
    Yang, Fan
    Li, Guangqiang
    Gan, Zhanghua
    JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 607 : 91 - 98
  • [48] Molten-salt synthesis of two new open-framework zinc phosphates via salt inclusion:: Cs3Zn3(P2O7)2Cl (Cu-7) and K3Zn3(P2O7)2Cl (Cu-10).
    Ulutagay, M
    Wojcik, S
    Hwu, SJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2001, 221 : U710 - U710
  • [49] Synthesis of new chiral ferrocenyl P,N-ligands with a benzoxazole ring and their application in Ag-catalyzed asymmetric [3+2] cycloaddition
    Yan, Sheng
    Zhang, Cheng
    Wang, Ya-Hui
    Cao, Zhong
    Zheng, Zhuo
    Hu, Xiang-Ping
    TETRAHEDRON LETTERS, 2013, 54 (28) : 3669 - 3672
  • [50] Preparations of highly N-doped p-type ZnTe and ZnTe-ZnSe SLs grown by HWE using Zn3N2 codoping source
    Sakakibara, S
    Yamashita, M
    Tanoue, F
    Ishino, K
    Ishida, A
    Fujiyasu, H
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 105 - 108
12345