Feasibility of the synthesis of AlAsN and GaAsN films by plasma-source molecular-beam epitaxy

被引：0
|
作者：
Brown Univ, Providence, United States [1 ]
机构：
来源：
J Cryst Growth | / 1-2卷 / [d]45-55期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] MOLECULAR-BEAM EPITAXY
    BALIBAR, F
    RECHERCHE, 1977, 8 (83): : 984 - 987
  • [32] MOLECULAR-BEAM EPITAXY
    PANISH, MB
    SCIENCE, 1980, 208 (4446) : 916 - 922
  • [33] MOLECULAR-BEAM EPITAXY
    JOYCE, BA
    REPORTS ON PROGRESS IN PHYSICS, 1985, 48 (12) : 1637 - 1697
  • [34] MOLECULAR-BEAM EPITAXY
    FOXON, CT
    ACTA ELECTRONICA, 1978, 21 (02): : 139 - 150
  • [35] MOLECULAR-BEAM EPITAXY
    PANISH, MG
    CHO, AY
    IEEE SPECTRUM, 1980, 17 (04) : 18 - 23
  • [36] MOLECULAR-BEAM EPITAXY
    MARSHALL, S
    SOLID STATE TECHNOLOGY, 1976, 19 (05) : 29 - 29
  • [37] MOLECULAR-BEAM EPITAXY
    CHO, AY
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) : C105 - C105
  • [38] Molecular-beam epitaxy of ultrathin Si films on sapphire
    Shilyaev, P. A.
    Pavlov, D. A.
    Korotkov, E. V.
    Treushnikov, M. V.
    MICRO- AND NANOELECTRONICS 2007, 2008, 7025
  • [39] Metalorganic molecular beam epitaxy of GaAsN with dimethylhydrazine
    Qiu, Y
    Jin, C
    Francoeur, S
    Nikishin, SA
    Temkin, H
    APPLIED PHYSICS LETTERS, 1998, 72 (16) : 1999 - 2001
  • [40] PREPARATION OF DYBACUO FILMS THROUGH MOLECULAR-BEAM EPITAXY
    MAMUTIN, VV
    KARTENKO, NF
    GOLOSHCHAPOV, SI
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1993, 19 (05): : 48 - 52
12345