Creation of a new in-based material by laser irradiation of chalcopyrite-type ternary semiconductors

被引：0
|
作者：
机构：
[1] Tanino, H.
[2] Fujikake, H.
[3] Nakanishi, H.
来源：
Tanino, H. | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 74期
关键词：
Amorphous silicon - Crystallization - Electric conductivity measurement - Irradiation - Lasers - Radiation effects - Raman scattering;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
In this study, it was observed that the chalcopyrite-type ternary semiconductors including In, such as CuInSe2, were converted into a new material primarily made of In by the laser irradiation. The Raman spectra of the transformed material were always the same, independent of the original compounds. In addition, the crystallization of a-Si:H was determined using laser irradiation in the same fashion and compared the strength to the light of both materials.
引用
收藏
相关论文
共 50 条
  • [21] NEW TYPE OF SOLID-PHASE EPITAXY OF ALLOY SEMICONDUCTORS BY ELECTRON-BEAM IRRADIATION
    WADA, T
    MAEDA, Y
    APPLIED PHYSICS LETTERS, 1988, 52 (01) : 60 - 62
  • [22] CREATION OF A HETEROGENEOUS MATERIAL BASED ON THE TITANIUM ALLOY AND TITANIUM BORIDE BY SELECTIVE LASER MELTING
    V. M. Fomin
    T. A. Brusentseva
    A. A. Golyshev
    A. G. Malilkov
    A. V. Mishin
    A. M. Orishich
    A. A. Filippov
    Journal of Applied Mechanics and Technical Physics, 2021, 62 : 752 - 759
  • [23] CREATION OF A HETEROGENEOUS MATERIAL BASED ON THE TITANIUM ALLOY AND TITANIUM BORIDE BY SELECTIVE LASER MELTING
    Fomin, V. M.
    Brusentseva, T. A.
    Golyshev, A. A.
    Malilkov, A. G.
    Mishin, A., V
    Orishich, A. M.
    Filippov, A. A.
    JOURNAL OF APPLIED MECHANICS AND TECHNICAL PHYSICS, 2021, 62 (05) : 752 - 759
  • [24] New approach for the spectroscopy of an isolated hydrogen-like atom in semiconductors by μSR under laser irradiation
    Shimomura, K
    Kadono, R
    Nishiyama, K
    Nagamine, K
    PHYSICA B, 2001, 302 : 257 - 262
  • [25] X-RAY SPECTROSCOPIC STUDY OF TERNARY CHALCOPYRITE SEMICONDUCTORS OF THE TYPE CUALS2, CUGAS2, CUINS2, CUTLS2
    DESHPANDE, AP
    SAPRE, VB
    MANDE, C
    JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (13): : L433 - L435
  • [26] Automatic laser based material identification and marking, a new approach
    Quay, R
    Sattmann, R
    Noll, R
    LASERS IN MATERIAL PROCESSING, 1997, 3097 : 392 - 399
  • [27] Lateral current injection laser based on type II material system
    Laikhtman, B
    Luryi, S
    Belenky, G
    PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1789 - 1790
  • [28] A new type of multifunctional material based on dual photochromism of ternary chiral photochromic liquid crystalline copolymers for optical data recording and storage
    Bobrovsky, A
    Boiko, N
    Shibaev, V
    JOURNAL OF MATERIALS CHEMISTRY, 2000, 10 (05) : 1075 - 1081
  • [29] Rhodium-Alloyed Beta Gallium Oxide Materials: New Type Ternary Ultra-Wide Bandgap Semiconductors
    Zha, Xian-Hu
    Wan, Yu-Xi
    Li, Shuang
    Zhang, Dao Hua
    ADVANCED ELECTRONIC MATERIALS, 2025, 11 (01):
  • [30] Recognition of Laser-Printed Characters Based on Creation of New Laser-Printed Characters Datasets
    Furukawa, Takeshi
    DOCUMENT ANALYSIS AND RECOGNITION, ICDAR 2021 WORKSHOPS, PT I, 2021, 12916 : 407 - 421
12345