Creation of a new in-based material by laser irradiation of chalcopyrite-type ternary semiconductors

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机构：
[1] Tanino, H.
[2] Fujikake, H.
[3] Nakanishi, H.
来源：
Tanino, H. | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 74期
关键词：
Amorphous silicon - Crystallization - Electric conductivity measurement - Irradiation - Lasers - Radiation effects - Raman scattering;
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摘要：
In this study, it was observed that the chalcopyrite-type ternary semiconductors including In, such as CuInSe2, were converted into a new material primarily made of In by the laser irradiation. The Raman spectra of the transformed material were always the same, independent of the original compounds. In addition, the crystallization of a-Si:H was determined using laser irradiation in the same fashion and compared the strength to the light of both materials.
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