SIMPLE MODEL OF MOS TRANSISTORS ON LARGE-GRAIN POLYCRYSTALLINE SILICON.

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作者：
Morales-Acevedo, A. [1 ]
机构：
[1] Inst Politecnico Nacional, Dep de, Ingenieria Electrica, Mexico City,, Mex, Inst Politecnico Nacional, Dep de Ingenieria Electrica, Mexico City, Mex
来源：
| 1600年 / 88期
关键词：
MOS TRANSISTORS - POLYCRYSTALLINE SILICON;
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