Effect of interstitial oxygen on formation of amorphous SiOx layer in directly bonded Czochralski silicon wafers

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[1] Ishigami, Shun-ichiro
[2] Kawai, Yukio
[3] Furuya, Hisashi
[4] Shingyouji, Takayuki
[5] Saitoh, Yuichi
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Ishigami, Shun-ichiro | 1600年 / 32期
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