Effect of interstitial oxygen on formation of amorphous SiOx layer in directly bonded Czochralski silicon wafers

被引：0
|
作者：
机构：
[1] Ishigami, Shun-ichiro
[2] Kawai, Yukio
[3] Furuya, Hisashi
[4] Shingyouji, Takayuki
[5] Saitoh, Yuichi
来源：
Ishigami, Shun-ichiro | 1600年 / 32期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] EFFECT OF INTERSTITIAL OXYGEN ON FORMATION OF AMORPHOUS SIOX LAYER IN DIRECTLY BONDED CZOCHRALSKI SILICON-WAFERS
    ISHIGAMI, S
    KAWAI, Y
    FURUYA, H
    SHINGYOUJI, T
    SAITOH, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (12A): : 5463 - 5467
  • [2] EFFECT OF NATIVE-OXIDE UPON FORMATION OF AMORPHOUS SIOX LAYER AT THE INTERFACE OF DIRECTLY BONDED SILICON-WAFERS
    ISHIGAMI, SI
    KONDOH, H
    RYUTA, J
    KAWAI, Y
    FURUYA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (2A): : 425 - 429
  • [3] INTERSTITIAL OXYGEN GETTERING IN CZOCHRALSKI SILICON WAFERS
    ROZGONYI, GA
    PEARCE, CW
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C307 - C307
  • [4] EFFECT OF BACK-SURFACE POLYCRYSTALLINE SILICON LAYER ON OXYGEN PRECIPITATION IN CZOCHRALSKI SILICON-WAFERS
    SHIRAI, H
    YAMAGUCHI, A
    SHIMURA, F
    APPLIED PHYSICS LETTERS, 1989, 54 (18) : 1748 - 1750
  • [5] White beam synchrotron topographic characterisation of silicon wafers directly bonded by oxide layer
    Wierzchowski, W
    Wieteska, K
    Graeff, W
    Gawlik, G
    Pawlowska, M
    ACTA PHYSICA POLONICA A, 1999, 96 (02) : 283 - 288
  • [6] Luminescence of dislocation network in directly bonded silicon wafers
    Yu, X.
    Kittler, M.
    Vyvenko, O. F.
    Seifert, W.
    Arguirov, T.
    Wilheim, T.
    Reiche, M.
    PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 8, 2007, 4 (08): : 3025 - +
  • [7] GOLD GETTERING IN DIRECTLY BONDED SILICON-WAFERS
    YANG, WS
    AHN, KY
    MARIOTON, BPR
    STENGL, R
    GOSELE, U
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (05): : L721 - L724
  • [8] Ultra thin silicon films directly bonded onto silicon wafers
    Fournel, F
    Moriceau, H
    Magnea, N
    Eymery, J
    Rouvière, JL
    Rousseau, K
    Aspar, B
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3): : 42 - 46
  • [9] The effect of atmospheric moisture on crack propagation in the interface between directly bonded silicon wafers
    Masteika, V.
    Kowal, J.
    Braitwaite, N. St J.
    Rogers, T.
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2013, 19 (05): : 705 - 712
  • [10] Charged defects at the interface between directly bonded silicon wafers
    Laporte, A
    Sarrabayrouse, G
    Benamara, M
    Claverie, A
    Rocher, A
    PeyreLavigne, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (9A): : 5502 - 5506
12345