pnp-type GaAs inversion-base bipolar transistor (pnp-type GaAs IBT)

被引:0
|
作者
机构
[1] Matsumoto, Kazuhiko
[2] Hayashi, Yutaka
[3] Kojima, Takeshi
[4] Yoshimoto, Tomomi
[5] Nagata, Toshiyuki
来源
Matsumoto, Kazuhiko | 1600年 / 28期
关键词
11;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] PNP-TYPE GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (PNP-TYPE GAAS IBT)
    MATSUMOTO, K
    HAYASHI, Y
    KOJIMA, T
    YOSHIMOTO, T
    NAGATA, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04): : L538 - L540
  • [2] GaAs INVERSION-BASE BIPOLAR TRANSISTOR (GaAs IBT).
    Matsumoto, Kazuhiko
    Hayashi, Yutaka
    Hashizume, Nobuo
    Yao, Takafumi
    Kato, Mansanori
    Miyashita, Toshiyuki
    Fukuhara, Noboru
    Hirashima, Hirofumi
    Kinosada, Toshiaki
    Electron device letters, 1986, EDL-7 (11): : 627 - 628
  • [3] GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (GAAS IBT)
    MATSUMOTO, K
    HAYASHI, Y
    HASHIZUME, N
    YAO, T
    KATO, M
    MIYASHITA, T
    FUKUHARA, N
    HIRASHIMA, H
    KINOSADA, T
    IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 627 - 628
  • [4] GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (GAAS IBT)
    MATSUMOTO, K
    HAYASHI, Y
    HASHIZUME, N
    YAO, T
    KATO, M
    MIYASHITA, T
    FUKUHARA, N
    KINOSADA, T
    HIRASHIMA, H
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1845 - 1845
  • [5] PNP-TYPE INP/INGAASP/INP BIPOLAR-TRANSISTOR
    SU, LM
    SCHROETERJANSSEN, H
    LI, KC
    GROTE, N
    ELECTRONICS LETTERS, 1985, 21 (21) : 989 - 990
  • [6] GaAs inversion-base bipolar transistor (GaAs IBT) with graded emitter barrier
    Matsumoto, Kazuhiko
    Hayashi, Yutaka
    Nagata, Toshiyuki
    Yoshimoto, Tomomi
    Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 pt 2 (06):
  • [7] GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (GAAS IBT) WITH GRADED EMITTER BARRIER
    MATSUMOTO, K
    HAYASHI, Y
    NAGATA, T
    YOSHIMOTO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06): : L1154 - L1156
  • [8] AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers
    Xiang, Y.
    Reuterskiold-Hedlund, C.
    Yu, X.
    Yang, C.
    Zabel, T.
    Hammar, M.
    Akram, M. N.
    OPTICS EXPRESS, 2015, 23 (12): : 15680 - 15699
  • [9] INTEGRATION OF A GAAS SISFET AND GAAS INVERSION-BASE BIPOLAR-TRANSISTOR
    MATSUMOTO, K
    HAYASHI, Y
    KOJIMA, T
    NAGATA, T
    YOSHIMOTO, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (12): : L2427 - L2430
  • [10] Mononuclear Rh(II) PNP-type complexes. Structure and reactivity
    Diskin-Posner, Yael M.
    Feller, Moran
    Ben-Ari, Eyal
    Gupta, Tarkeshwar
    Shimon, Linda J. W.
    Leitus, Gregory
    Weiner, Lev
    Milstein, David
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2008, 64 : C440 - C440