GaAs inversion-base bipolar transistor (GaAs IBT) with graded emitter barrier

被引：0

作者：

Matsumoto, Kazuhiko ^{[1
]}

Hayashi, Yutaka ^{[1
]}

Nagata, Toshiyuki ^{[1
]}

Yoshimoto, Tomomi ^{[1
]}

机构：

[1] Electrotechnical Lab, Japan

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1988年 / 27 pt 2卷 / 06期

关键词：

Semiconducting Gallium Arsenide--Applications;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In the GaAs inversion-baser bipolar transistor, the graded layer was introduced to the emitter barrier. It was proved that the graded layer decreased the effective barrier height of the emitter barrier and enhanced the electron flow from the emitter to the collector. These effects of the graded layer improved the current gain of the GaAs IBT by two orders of magnitude.

引用

共 50 条

[1] GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (GAAS IBT) WITH GRADED EMITTER BARRIER
MATSUMOTO, K
HAYASHI, Y
NAGATA, T
YOSHIMOTO, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06): : L1154 - L1156
[2] GaAs INVERSION-BASE BIPOLAR TRANSISTOR (GaAs IBT).
Matsumoto, Kazuhiko
Hayashi, Yutaka
Hashizume, Nobuo
Yao, Takafumi
Kato, Mansanori
Miyashita, Toshiyuki
Fukuhara, Noboru
Hirashima, Hirofumi
Kinosada, Toshiaki
Electron device letters, 1986, EDL-7 (11): : 627 - 628
[3] GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (GAAS IBT)
MATSUMOTO, K
HAYASHI, Y
HASHIZUME, N
YAO, T
KATO, M
MIYASHITA, T
FUKUHARA, N
HIRASHIMA, H
KINOSADA, T
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 627 - 628
[4] GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (GAAS IBT)
MATSUMOTO, K
HAYASHI, Y
HASHIZUME, N
YAO, T
KATO, M
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FUKUHARA, N
KINOSADA, T
HIRASHIMA, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1845 - 1845
[5] pnp-type GaAs inversion-base bipolar transistor (pnp-type GaAs IBT)
Matsumoto, Kazuhiko, 1600, (28):
[6] PNP-TYPE GAAS INVERSION-BASE BIPOLAR-TRANSISTOR (PNP-TYPE GAAS IBT)
MATSUMOTO, K
HAYASHI, Y
KOJIMA, T
YOSHIMOTO, T
NAGATA, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1989, 28 (04): : L538 - L540
[7] INTEGRATION OF A GAAS SISFET AND GAAS INVERSION-BASE BIPOLAR-TRANSISTOR
MATSUMOTO, K
HAYASHI, Y
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[8] ALGAAS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH NONALLOYED GRADED-GAP OHMIC CONTACTS TO THE BASE AND EMITTER
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CAINE, EJ
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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (11) : 1845 - 1845
[9] Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base
Chen, YW
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 2555 - 2557
[10] AN (AL,GA)AS/GAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR WITH NONALLOYED GRADED-GAP OHMIC CONTACTS TO THE BASE AND EMITTER
RAO, MA
CAINE, EJ
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IEEE ELECTRON DEVICE LETTERS, 1987, 8 (01) : 30 - 32

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