Effects of MgO-doping on electrical properties and microstructure of BaTiO3

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[1] Jeong, Jaill
[2] Han, Young Ho
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Han, Y.H. (yhhan@skku.ac.kr) | 1600年 / Japan Society of Applied Physics卷 / 43期
关键词
Ceramic capacitors - Doping (additives) - Electric fields - Grain size and shape - Leakage currents - Magnesia - Microstructure - Oxygen - Permittivity - Powder metals - Reduction - Synthesis (chemical);
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摘要
Degradation behaviors of Mg-doped BaTiO3 have been studied in terms of oxygen vacancy concentration and microstructural development. Mg-doped BaTiO3 powders were precisely synthesized by the Pechini method. As MgO content was increased to 1.0 mol%, Curie points moved to lower temperatures and dielectric constants decreased. The specimens doped with MgO showed higher leakage currents under the continuously applied dc field at a high temperature (100°C) during the aging process, compared with the undoped BaTiO 3. With low levels of MgO (3, whereas a significant reduction in grain size was observed with higher levels (>2.0mol%).
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