Silicon FETs with controlling p-n junctions for operation at cryogenic temperatures

被引：0
|
作者：
Mochalkina, O.R. [1 ]
Smirnov, A.I. [1 ]
机构：
[1] Moskovskij Inzhenerno-Fizicheskij, Inst, Moscow, Russia
来源：
Mikroelektronika | 1993年 / 02期
关键词：
Field effect transistors - Junction gate field effect transistors - Transistors;
D O I：
暂无
中图分类号：
TN3 [半导体技术]; TN4 [微电子学、集成电路（IC）];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ; 1401 ;
摘要：
A calculation of in-depth boron concentrations in the gate junction of a silicon p-channel FET, which are necessary for its operation at the liquid helium temperature, is carried out. The voltage-current characteristics of the manufactured FET prototypes with controlled p-n junctions are studied at temperatures of 4.2 and 40 K. The disadvantages of the structures obtained are noted, and an approach to eliminating these disadvantages is outlined.
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页码：27 / 30
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