Identification of process induced defects in silicon power devices

被引：0
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作者：
Astrova, E.V. [1 ]
Kozlov, V.A. [1 ]
Lebedev, A.A. [1 ]
Voronkov, V.B. [1 ]
机构：
[1] Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, RU-194021 St-Petersburg, Russia
来源：
Solid State Phenomena | 1999年 / 69卷
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页码：539 / 544
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