Intrinsic dead layer effect and the performance of ferroelectric thin film capacitors

被引：0
|
作者：
Zhou, C. [1 ]
Newns, D.M. [1 ]
机构：
[1] IBM T.J. Watson Research Cent, Yorktown Heights, United States
来源：
Journal of Engineering and Applied Science | 1998年 / 82卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
页码：3081 / 3088
相关论文
共 50 条
  • [21] Microstructured organic ferroelectric thin film capacitors by solution micromolding
    Lenz, Thomas
    Zhao, Dong
    Richardson, George
    Katsouras, Ilias
    Asadi, Kamal
    Glasser, Gunnar
    Zimmermann, Samuel T.
    Stingelin, Natalie
    Roelofs, W. S. Christian
    Kemerink, Martijn
    Blom, Paul W. M.
    de Leeuw, Dago M.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (10): : 2124 - 2132
  • [22] Temperature and voltage dependence in PZT ferroelectric thin film capacitors
    Masuda, Y
    Fujita, S
    Nishida, T
    FERROELECTRICS, 1999, 232 (1-4) : 939 - 944
  • [23] Switching quality of thin-film PZT ferroelectric capacitors
    Wouters, DJ
    Nouwen, R
    Norga, GJ
    Bartic, A
    Van Poucke, L
    Maes, HE
    JOURNAL DE PHYSIQUE IV, 1998, 8 (P9): : 205 - 208
  • [24] Relaxation mechanisms in ferroelectric thin film capacitors for FeRAM application
    Lohse, O
    Grossmann, M
    Bolten, D
    Boettger, U
    Waser, R
    INTEGRATED FERROELECTRICS, 2001, 33 (1-4) : 39 - 48
  • [25] Dry etching issues in the integration of ferroelectric thin film capacitors
    Menk, GE
    Desu, SB
    Pan, W
    Vijay, DP
    FERROELECTRIC THIN FILMS V, 1996, 433 : 189 - 200
  • [26] Effect of geometry upon the performance of a thin film ferroelectric capacitor
    Pane, I.
    Fleck, N. A.
    Huber, J. E.
    Chu, D. P.
    INTERNATIONAL JOURNAL OF SOLIDS AND STRUCTURES, 2008, 45 (7-8) : 2024 - 2041
  • [27] Cooperative effect of oxygen-vacancy-rich layer and ferroelectric polarization on photovoltaic properties in BiFeO3 thin film capacitors
    Matsuo, Hiroki
    Kitanaka, Yuuki
    Inoue, Ryotaro
    Noguchi, Yuji
    Miyayama, Masaru
    APPLIED PHYSICS LETTERS, 2016, 108 (03)
  • [28] Switchable diode-effect mechanism in ferroelectric BiFeO3 thin film capacitors
    Matsuo, Hiroki
    Kitanaka, Yuuki
    Inoue, Ryotaro
    Noguchi, Yuji
    Miyayama, Masaru
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (11)
  • [29] Switchable diode-effect mechanism in ferroelectric BiFeO3 thin film capacitors
    1600, American Institute of Physics Inc. (118):
  • [30] Drift and deformation of the hysteresis curve in thin film ferroelectric capacitors with conductance
    Zheng, LR
    Lin, CL
    Xu, WP
    Okuyama, M
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1996, 29 (07) : 2020 - 2024
12345