共 48 条
- [1] TRANSMISSION ELECTRON-MICROSCOPY AND X-RAY-DIFFRACTION INVESTIGATION OF IN SEGREGATION IN MOVPE-GROWN INGAAS-BASED MQWS WITH EITHER GAAS OR ALGAAS BARRIERS MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 346 - 352
- [3] Transmission electron microscopy, X-ray diffraction and photoluminescence study of InGaAs/GaAs heterostructures MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, 1997, (157): : 291 - 294
- [5] Structural properties of MOVPE-grown ZnSe studied by X-ray diffractometry, atomic force microscopy and electron microscopy GROWTH, CHARACTERISATION AND APPLICATIONS OF BULK II-VIS, 1999, 78 : 507 - 512
- [7] Structural properties of MOVPE-grown ZnSe studied by X-ray diffractometry, atomic force microscopy and electron microscopy J Cryst Growth, 3 (507-512):
- [8] Investigation of lithiated carbons by transmission electron microscopy and X-ray diffraction analysis SOLID STATE IONICS V, 1999, 548 : 37 - 47
- [9] An X-ray diffraction and electron-microscopic study of the influence of gamma radiation on multilayer AlGaAs/InGaAs/GaAs heterostructures Semiconductors, 2006, 40 : 687 - 690