Fabrication and characterization of metal-insulator-semiconductor field effect transistors using sputtered silicon nitride films as a gate dielectric

被引：0
|
作者：
Sundaram, K.B.
Seshan, S.S.
机构：
来源：
International Journal of Electronics | 1994年 / 77卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
相关论文
共 50 条
  • [41] Normally-Off AlGaN/GaN Heterojunction Metal-Insulator-Semiconductor Field-Effect Transistors With Gate-First Process
    Pu, Taofei
    Wang, Xiao
    Huang, Qian
    Zhang, Tong
    Li, Xiaobo
    Li, Liuan
    Ao, Jin-Ping
    IEEE ELECTRON DEVICE LETTERS, 2019, 40 (02) : 185 - 188
  • [42] APPLICATION OF DIAMOND-LIKE LAYERS AS GATE DIELECTRIC IN METAL-INSULATOR-SEMICONDUCTOR TRANSISTOR
    SZMIDT, J
    BECK, RB
    MITURA, S
    SOKOLOWSKA, A
    DIAMOND AND RELATED MATERIALS, 1994, 3 (4-6) : 853 - 857
  • [43] Trap related dielectric absorption of HfSiO films in metal-insulator-semiconductor structures
    Kerber, M.
    Fachmann, C.
    Heitmann, J.
    Kudelka, S.
    Schroeder, U.
    Reisinger, H.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2009, 27 (01): : 321 - 324
  • [44] GAAS POWER METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR WITH SUPERLATTICE GATE INSULATOR AND SUPERLATTICE BUFFER STRUCTURE
    LIU, WC
    LOUR, WS
    SUN, CY
    THIN SOLID FILMS, 1990, 188 (02) : 213 - 218
  • [45] MAGNETOCONDUCTANCE STUDY OF INVERSION-LAYERS ON INAS METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    YAMAGUCHI, E
    MINAKATA, M
    APPLIED PHYSICS LETTERS, 1983, 43 (10) : 965 - 967
  • [46] Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors
    1600, American Institute of Physics Inc. (118):
  • [47] FABRICATION OF METAL-INSULATOR-SEMICONDUCTOR DEVICES USING POLYCRYSTALLINE DIAMOND FILM
    KIYOTA, H
    OKANO, K
    IWASAKI, T
    IZUMIYA, H
    AKIBA, Y
    KUROSU, T
    IIDA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (12A): : L2015 - L2017
  • [48] NEW MODEL FOR SLOW CURRENT DRIFT IN INP METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS
    GOODNICK, SM
    HWANG, T
    WILMSEN, CW
    APPLIED PHYSICS LETTERS, 1984, 44 (04) : 453 - 455
  • [49] GaAs metal-insulator-semiconductor structure and field effect transistors grown by ex-situ approach
    Chen, Z
    Mohammad, SN
    ELECTRONICS LETTERS, 1997, 33 (22) : 1906 - 1907
  • [50] Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors
    Liu, J. W.
    Liao, M. Y.
    Imura, M.
    Matsumoto, T.
    Shibata, N.
    Ikuhara, Y.
    Koide, Y.
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (11)
12345