NEGATIVE RESISTANCE CHARACTERISTICS IN JFET.

被引：0

作者：

Arivoli, T. ^{[1
]}

Ramkumar, Krishnaswamy ^{[1
]}

Satyam, Mandavilli ^{[1
]}

机构：

[1] Indian Inst of Science, Dep of, Electrical Communication, Bangalore,, India, Indian Inst of Science, Dep of Electrical Communication, Bangalore, India

来源：

AEU. Archiv fur Elektronik und Ubertragungstechnik | 1984年 / 38卷 / 05期

关键词：

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

This letter reports the negative resistance that is observed in the input characteristics of a JFET when the drain voltage is very large. The origin of this negative resistance is explained on the basis of avalanche multiplication in the device.

引用

共 50 条

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[9] Modelling and characterisation of the input I-V curves of bipolar JFET structures showing a negative resistance behaviour
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[J]. SOLID-STATE ELECTRONICS, 2001, 45 (03) : 483 - 488
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