COMPLEMENTARY JFET NEGATIVE-RESISTANCE DEVICES

被引：21

作者：

TAKAGI, H ^{[1
]}

KANO, G ^{[1
]}

机构：

[1] MATSUSHITA ELECTR CORP,RES LAB,TAKATSUKI,OSAKA,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1975年 / 10卷 / 06期

关键词：

D O I：

10.1109/JSSC.1975.1050651

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：509 / 515

页数：7

共 50 条

[1] BIPOLAR JFET MOSFET NEGATIVE-RESISTANCE DEVICES
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[J]. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1985, 32 (01): : 46 - 61
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[10] NEGATIVE-RESISTANCE DEVICES .2.
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