Propagation of current-induced stacking faults and forward voltage degradation in 4H-SiC PiN diodes

被引：0
|
作者：
Stahlbush, R.E. [1 ]
Fedison, J.B. [2 ]
Arthur, S.D. [2 ]
Rowland, L.B. [2 ]
Kretchmer, J.W. [2 ]
Wang, S. [3 ]
机构：
[1] Naval Research Laboratory, Washington, DC 20375, United States
[2] Center for Integrated Electronics and Electronic Manufacturing, Rensselaer Polytechnic Institute, Troy, NY 12180-3590, United States
[3] General Electric Corporate Research and Development Center, Niskayuna, NY 12309, United States
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
Crystal growth - Electric currents - Electric potential - Electroluminescence - Imaging techniques - Light emission - Nucleation - Stacking faults;
D O I：
10.4028/www.scientific.net/msf.389-393.427
中图分类号：
学科分类号：
摘要：
Stacking fault growth in 4H SiC PiN diodes at 1 A (160 A/cm2) has been examined by light emission imaging. Dark areas of reduced current flow develop due to stacking fault nucleation and growth. The voltage increase at constant current varies by an order of magnitude within the same wafer and the length scale of the variations is 2 - 3 mm. The variations are explained by the number of stacking faults that nucleate and by pinning of the stacking fault growth. © 2002 Trans Tech Publications.
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页码：427 / 430
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