Fabrication of 50 nm trigate silicon on insulator metal-oxide-silicon field-effect transistor without source/drain activation annealing

被引：0
|
作者：
机构：
[1] Im, Kiju
[2] Cho, Won-Ju
[3] Ahn, Chang-Geun
[4] Yang, Jong-Heon
[5] Oh, Jihun
[6] Lee, Seongjae
[7] Hwang, Hyunsang
来源：
Im, K. (kiju@etri.re.kr) | 1600年 / Japan Society of Applied Physics卷 / 43期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Fabrication of 50 nm trigate silicon on insulator metal-oxide-silicon field-effect transistor without source/drain activation annealing
    Im, K
    Cho, WJ
    Ahn, CG
    Yang, JH
    Oh, J
    Lee, S
    Hwang, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (5A): : 2438 - 2441
  • [2] Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress
    Kuo, Y. J.
    Chang, T. C.
    Yeh, P. H.
    Chen, S. C.
    Dai, C. H.
    Chao, C. H.
    Young, T. F.
    Cheng, Osbert
    Huang, C. T.
    THIN SOLID FILMS, 2009, 517 (05) : 1715 - 1718
  • [3] A percolation model for random telegraph signals in metal-oxide-silicon field effect transistor drain current
    Forbes, L.
    Miller, D. A.
    APPLIED PHYSICS LETTERS, 2008, 93 (04)
  • [4] Modeling of floating-body effect in silicon-on-insulator metal-oxide-silicon field-effect transistor with complete surface-potential-based description
    Murakami, Takahiro
    Ando, Makoto
    Sadachika, Norio
    Yoshid, Takaki
    Miura-Mattausch, Mitiko
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2556 - 2559
  • [5] A METAL-OXIDE-SILICON FIELD-EFFECT TRANSISTOR MADE BY MEANS OF SOLID-PHASE DOPING
    GONG, SF
    HENTZELL, HTG
    ROBERTSSON, A
    STRANDBERG, J
    HAGEL, J
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (11) : 4435 - 4437
  • [6] Effects of ion implantation damage on elevated source/drain formation for ultrathin body silicon on insulator metal oxide semiconductor field-effect transistor
    Oh, H
    Sakaguchi, T
    Fukushima, T
    Koyanagi, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B): : 2965 - 2969
  • [7] Fabrication and characteristics of a metal/ferroelectric/polycrystalline silicon/insulator/silicon field effect transistor
    Cai, Daolin
    Li, Ping
    Zhang, Shuren
    Zhai, Yahong
    Ruan, Aiwu
    Ou, Yangfan
    Chen, Yanyu
    Wu, Dongshen
    APPLIED PHYSICS LETTERS, 2007, 90 (15)
  • [8] EVALUATION OF A DUAL BIAS DUAL METAL-OXIDE-SILICON SEMICONDUCTOR FIELD-EFFECT TRANSISTOR DETECTOR AS RADIATION DOSIMETER
    SOUBRA, M
    CYGLER, J
    MACKAY, G
    MEDICAL PHYSICS, 1994, 21 (04) : 567 - 572
  • [9] Surface Recombination/Generation Velocity in Metal-Oxide-Silicon Field-Effect Transistors
    Chen, Zuhui
    Zhou, Xing
    Zhu, Guojun
    Lin, Shihuan
    2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009), 2009, : 123 - 126
  • [10] Analysis of short-channel Schottky source/drain metal-oxide-semiconductor field-effect transistor on silicon-on-insulator substrate and demonstration of sub-50-nm n-type devices with metal gate
    Saitoh, W
    Itoh, A
    Yamagami, S
    Asada, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (11): : 6226 - 6231
12345