Optimized layers design for AlGaN/GaN/InGaN symmetrical separate confinement heterojunction multi-quantum well laser diode

被引：0
|
作者：
Lu, Min [1 ]
Fang, Huizhi [1 ]
Zhang, Guoyi [1 ]
机构：
[1] Lab. for Artificial Microstructures, Sch. of Phys., Peking Univ., Beijing 100871, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2004年 / 25卷 / 05期
关键词：
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学科分类号：
摘要：
Semiconductor lasers
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页码：492 / 496
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