Al growth on Si(111)(√3 × √3)-Ga surfaces at room temperature

被引：0
|
作者：
Maehashi, Kenzo [1 ]
Katsuki, Hiroyuki [1 ]
Nakashima, Hisao [1 ]
机构：
[1] Osaka Univ, Osaka, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1995年 / 34卷 / 2 B期
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摘要：
7
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页码：997 / 1000
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