CHARGE TRANSPORT STUDY IN THIN FILM Au-CdTe SCHOTTKY DIODES.

被引：0

作者：

Kindl, D. ^{[1
]}

Touskova, J. ^{[1
]}

机构：

[1] Charles Univ, Prague, Cezch, Charles Univ, Prague, Cezch

来源：

Physica Status Solidi (A) Applied Research | 1988年 / 106卷 / 01期

关键词：

SEMICONDUCTOR DIODES - Thin Films - SOLAR CELLS - Materials;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Au-CdTe diodes were prepared on CdTe thin layers deposited electrochemically. Measurements of dark I-U characteristics at several temperatures and C-U characteristics at room temperature in darkness were used for the study of charge transport in the diodes. The results can be explained by a model consisting of the series connection of an Au-CdTe Schottky barrier, several intergranular (IG) barriers in the CdTe layer, and a relatively small series resistance of bulk of the grains. Some parameters of transport such as the quality factor of the diode and barrier heights of Schottky, and IG barriers are obtained and the impurity concentration and number of grain boundaries are estimated by comparison of theory with experiment.

引用

页码：297 / 304

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