New resist technologies for 0.25-μm wiring pattern fabrication with KrF lithography

被引：0

作者：

Kawai, Yoshio ^{[1
]}

Otaka, Akihiro ^{[1
]}

Tanaka, Akinobu ^{[1
]}

Nakamura, Jiro ^{[1
]}

Sakuma, Kazuhito ^{[1
]}

Matsuda, Tadahito ^{[1
]}

Sakakibara, Yutaka ^{[1
]}

机构：

[1] NTT System Electronics Lab, Kanagawa, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers | 1997年 / 36卷 / 4 A期

关键词：

Crosslinking - Etching - Excimer lasers - Lithography - Semiconductor device manufacture - Thermodynamic stability - Titanium nitride;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A new resist system composed of a chemically amplified positive resist and an organic base designed to be compatible with an acid generator has been developed to improve resolution on TiN films. It was clarified that the non-uniformity of the organic base like the acid generator in the resist film significantly contributes to high resist performance. A new hardening method has also been developed to improve the thermal stability of resist patterns for metal etching. Using the new technologies, 0.25-μm line and space (l&s) resolution on TiN films and highly accurate metal etching have been achieved.

引用

页码：2085 / 2090

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