Pulsed laser ablation deposition of crystalline ZnSe thin films

被引：0

作者：

Xu, Ning ^{[1
]}

Li, Fu-Ming ^{[1
]}

Boo, Bong-Hyung ^{[1
]}

Lee, Jea-Kuang ^{[1
]}

Cho, Han-Joung ^{[1
]}

机构：

[1] Dept. of Optical Sci. and Eng., Fudan Univ., Shanghai 200433, China

来源：

| 2001年 / Science Press卷 / 28期

关键词：

Pulsed laser deposition - Thin films;

D O I：

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学科分类号：

摘要：

Crystalline ZnSe thin films have been deposited on polished GaAs(100) substrates by pulsed laser ablation of a single target of polycrystalline ZnSe solid using KrF 248 nm excimer laser. Chemical etching and high-temperature heating were used for pretreatment of substrates. Atomic force microscopy (AFM) shows that the average roughnesses of ZnSe thin films can reach 3-4 nm. X-ray diffraction (XRD) shows that FWHM of ZnSe (400) peaks are 0.4°-0.5°. Analysis of quadruple mass spectroscopy for laser ablated plumes indicates that the plumes consist of Zn, Se and 2Se. It was deduced that ZnSe thin film was grown in two dimensional mode.

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