Optical properties and crystallization characteristics of Ge-doped Sb70Te30 phase change recording film

被引:0
|
作者
机构
[1] Her, Yung-Chiun
[2] Hsu, Yung-Sung
来源
Her, Y.-C. (ycho@dragon.nchu.edu.tw) | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词
Activation energy - Annealing - Crystallization - Optical properties - Semiconducting antimony - Semiconducting germanium - Semiconductor doping - Thermodynamic stability;
D O I
暂无
中图分类号
学科分类号
摘要
Eutectic Sb70Te30 fast-growth material is one of the promising candidates for high data transfer rate recording. However, it also shows the disadvantage of poor thermal stability. Germanium, with a high value of glass transition temperature, is expected to play the role of thermal stabilizer. It was found that the effect of Ge doping on reflectivity difference between as-deposited and annealed states is not significant. However, the addition of Ge element into Sb70Te30 can reduce the initialization or erasure power, and increase the stability of the phase change recording media at room temperature at the same time. Unfortunately, doping Ge element would also slow down the crystallization speed of eutectic Sb70Te30 recording film.
引用
收藏
相关论文
共 50 条
  • [41] Bi-Ge-Sb-Te films for reversible phase-change optical recording
    Lin, Su-Shia
    Heat Treatment of Materials, 2006, 118 : 293 - 297
  • [42] Au-catalyzed synthesis and characterisation of phase change Ge-doped Sb-Te nanowires by MOCVD
    Longo, M.
    Stoycheva, T.
    Fallica, R.
    Wiemer, C.
    Lazzarini, L.
    Rotunno, E.
    JOURNAL OF CRYSTAL GROWTH, 2013, 370 : 323 - 327
  • [43] High speed rewritable DVD up to 20m/s with nucleation-free eutectic phase-change material of Ge(Sb70Te30)+Sb
    Horie, M
    Nobukuni, N
    Kiyono, K
    Ohno, T
    OPTICAL DATA STORAGE 2000, 2000, 4090 : 135 - 143
  • [44] Structural, vibrational and electronic properties in the glass-crystal transition of thin films Sb70Te30 doped with Sn
    Bilovol, V
    Fontana, M.
    Rocca, J. A.
    Medina Chanduvi, H. H.
    Mudarra Navarro, A. M.
    Gil Rebaza, A., V
    Errico, L. A.
    Liang, A.
    Errandonea, D.
    Urena, A. M.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 845
  • [45] Refractive index modulation of Sb70Te30 phase-change thin films by multiple femtosecond laser pulses
    Lei, Kai
    Wang, Yang
    Jiang, Minghui
    Wu, Yiqun
    JOURNAL OF APPLIED PHYSICS, 2016, 119 (17)
  • [46] Acceleration of crystallization speed by Sn addition to Ge-Sb-Te phase-change recording material
    Kojima, R., 2001, Japan Society of Applied Physics (40):
  • [47] Acceleration of crystallization speed by Sn addition to Ge-Sb-Te phase-change recording material
    Kojima, R
    Yamada, N
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (10): : 5930 - 5937
  • [48] Crystallization behavior of oxygen-doped Ge-Sb-Te phase-change films
    Gu, SP
    Hou, LS
    ADVANCED OPTICAL STORAGE TECHNOLOGY, 2002, 4930 : 367 - 371
  • [49] Multi-Level Lateral Phase Change Memory Based on N-Doped Sb70Te30 Super-Lattice like Structure
    Yang Hongxin
    Shi Luping
    Koon, Lee Hock
    Zhao Rong
    Li Minghua
    Li Jianming
    Guan, Lim Kian
    Chong, Chong Tow
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2015, 4 (12) : N147 - N150
  • [50] Laser-induced crystallization in Ge-Sb-Te optical recording materials
    Zhou, G.F.
    Jacobs, B.A.J.
    van Es-Spiekman, W.
    Materials Science and Engineering A, 1997, A226-22 : 1069 - 1073