Characterization of nanocrystallites in porous p-type 6H-SiC

被引:0
|
作者
机构
来源
| 1600年 / American Inst of Physics, Woodbury, NY, USA卷 / 76期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [21] Investigation of Electrical Properties of P-type 6H-SiC Bulk Crystal
    Xie, Xuejian
    Peng, Yan
    Xiao, Longfei
    Hu, Xiaobo
    Xu, Xiangang
    2015 12TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA), 2015, : 167 - 170
  • [22] Electrically active defects in electron irradiated p-type 6H-SiC
    Alfieri, Giovanni
    Kimoto, Tsunenobu
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 253 - +
  • [23] Application and improvement of the spreading resistance method for p-type 6H-SiC
    Gebel, T.
    Panknin, D.
    Riehn, R.
    Parascandola, S.
    Skorupa, W.
    Materials Science Forum, 2000, 338
  • [24] Refractory metal boride ohmic contacts to P-Type 6H-SiC
    Oder T.N.
    Williams J.R.
    Mohney S.E.
    Crofton J.
    Journal of Electronic Materials, 1998, 27 (1) : 12 - 16
  • [25] Triangular prism-shaped p-type 6H-SiC nanowires
    Gao, Fengmei
    Feng, Wei
    Wei, Guodong
    Zheng, Jinju
    Wang, Mingfang
    Yang, Weiyou
    CRYSTENGCOMM, 2012, 14 (02): : 488 - 491
  • [26] Electrochemical C-V profiling of p-type 6H-SiC
    Kayambaki, M
    Zekentes, K
    SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2, 2000, 338-3 : 1061 - 1064
  • [27] GaN layers grown by HVPE on p-type 6H-SiC substrates
    Nikolaev, AE
    Melnik, YV
    Blashenkov, MN
    Kuznetsov, NI
    Nikitina, IP
    Zubrilov, AS
    Tsvetkov, DV
    Nikolaev, VI
    Dmitriev, VA
    Soloviev, VA
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1996, 1 (1-46): : U346 - U352
  • [28] Thermal stability of defects in p-type as-grown 6H-SiC
    Alfieri, G.
    Kimoto, T.
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (30)
  • [29] GaN layers grown by HVPE on P-type 6H-SiC substrates
    Ioffe Physical-Technical Institute
    MRS Internet J. Nitride Semicond. Res., (7d):
  • [30] Electrochemical C-V profiling of p-type 6H-SiC
    Kayambaki, M.
    Zekentes, K.
    Materials Science Forum, 2000, 338