Molecular beam epitaxy and characterisation of GaN-compounds on GaAs(001) and sapphire(0001)

被引：0

作者：

Zsebok, Otto ^{[1
]}

机构：

[1] Goteborgs universitet, Goteborg, Sweden

来源：

Doktorsavhandlingar vid Chalmers Tekniska Hogskola | 2000年 / 1616期

关键词：

Crystal defects - Impurities - Interfaces (materials) - Lattice constants - Molecular beam epitaxy - Morphology - Nucleation - Phase separation - Reflection high energy electron diffraction - Sapphire - Semiconductor growth - Surface roughness;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Plasma-assisted molecular beam epitaxy (MBE) growth of high-quality GaN-compounds was attempted. Zinc blende GaNxAs1-x layers were grown on GaAs(001) substrates, while high-quality wurtzite GaN layers were grown on sapphire(0001) substrates. By optimizing the epitaxial growth for GaN and AlxGa1-xN layers on sapphire(0001) substrates, high-quality materials were obtained. Using this know-how, piezo-induced AlGaN/GaN heterostructure field-effect transistor (HFET) structures were grown. The formation of a two-dimensional electron gas (2DEG) at the interface effectively improved the bulk mobility by a factor of three.

引用

页码：1 / 86

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