Molecular beam epitaxy and characterisation of GaN-compounds on GaAs(001) and sapphire(0001)

被引：0
|
作者：
Zsebok, Otto [1 ]
机构：
[1] Goteborgs universitet, Goteborg, Sweden
来源：
Doktorsavhandlingar vid Chalmers Tekniska Hogskola | 2000年 / 1616期
关键词：
Crystal defects - Impurities - Interfaces (materials) - Lattice constants - Molecular beam epitaxy - Morphology - Nucleation - Phase separation - Reflection high energy electron diffraction - Sapphire - Semiconductor growth - Surface roughness;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Plasma-assisted molecular beam epitaxy (MBE) growth of high-quality GaN-compounds was attempted. Zinc blende GaNxAs1-x layers were grown on GaAs(001) substrates, while high-quality wurtzite GaN layers were grown on sapphire(0001) substrates. By optimizing the epitaxial growth for GaN and AlxGa1-xN layers on sapphire(0001) substrates, high-quality materials were obtained. Using this know-how, piezo-induced AlGaN/GaN heterostructure field-effect transistor (HFET) structures were grown. The formation of a two-dimensional electron gas (2DEG) at the interface effectively improved the bulk mobility by a factor of three.
引用
收藏
页码：1 / 86
相关论文
共 50 条
  • [1] Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire
    Romano, LT
    Krusor, BS
    Singh, R
    Moustakas, TD
    JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (03) : 285 - 289
  • [2] Structure of GaN films grown by molecular beam epitaxy on (0001) sapphire
    L. T. Romano
    B. S. Krusor
    R. Singh
    T. D. Moustakas
    Journal of Electronic Materials, 1997, 26 : 285 - 289
  • [3] GROWTH AND CHARACTERIZATION OF GAAS ON SAPPHIRE (0001) BY MOLECULAR-BEAM EPITAXY
    DIEBOLD, AC
    STEINHAUSER, SW
    MARIELLA, RP
    MARTI, J
    REIDINGER, F
    ANTRIM, RF
    SURFACE AND INTERFACE ANALYSIS, 1990, 15 (02) : 150 - 158
  • [4] Chemical beam epitaxy of GaN on (0001) sapphire substrate
    Kappers, M
    Guyaux, JL
    Olivier, J
    Bisaro, R
    Grattepain, C
    Garcia, JC
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1999, 59 (1-3): : 52 - 55
  • [5] Chemical beam epitaxy of GaN on (0001) sapphire substrate
    Thomson-CSF LCR, Domaine de Corbeville, 91404 Orsay, Cedex, France
    Mater Sci Eng B Solid State Adv Technol, 1-3 (52-55):
  • [6] Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy
    Park, Y.S.
    Lee, H.S.
    Na, J.H.
    Kim, H.J.
    Si, Sang Man
    Kim, Hwa-Mok
    Kang, T.W.
    Oh, Jae Eung
    Journal of Applied Physics, 2003, 94 (01): : 800 - 802
  • [7] Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy
    Park, YS
    Lee, HS
    Na, JH
    Kim, HJ
    Si, SM
    Kim, HM
    Kang, TW
    Oh, JE
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) : 800 - 802
  • [8] Defect-controlled growth of GaN nanorods on (0001) sapphire by molecular beam epitaxy
    Cherns, D.
    Meshi, L.
    Griffiths, I.
    Khongphetsak, S.
    Novikov, S. V.
    Farley, N. R. S.
    Campion, R. P.
    Foxon, C. T.
    APPLIED PHYSICS LETTERS, 2008, 93 (11)
  • [9] Effects of small amounts of Al in GaN grown on sapphire (0001) by molecular beam epitaxy
    Zsebök, O
    Thordson, JV
    Zhao, QX
    Andersson, TG
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (03) : 1954 - 1958
  • [10] Plasma-assisted molecular beam epitaxy of GaN:In film on sapphire(0001) having the single polarity of (0001)
    Sonoda, S
    Shimizu, S
    Balakrishnan, K
    Okumura, H
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (2-3) : 364 - 367
12345