共 50 条
- [42] SMALL-SIGNAL PARAMETERS OF GAAS-MESFETS AS AFFECTED BY SUBSTRATE PROPERTIES - COMPUTER-SIMULATION IEICE TRANSACTIONS ON COMMUNICATIONS ELECTRONICS INFORMATION AND SYSTEMS, 1991, 74 (05): : 1191 - 1196
- [44] CARRIER INJECTION AND BACKGATING EFFECT IN GAAS-MESFETS ELECTRON DEVICE LETTERS, 1982, 3 (04): : 97 - 98
- [45] INFLUENCE OF SURFACE-DEFECTS ON THE BEHAVIOR OF GAAS-MESFETS REVUE DE PHYSIQUE APPLIQUEE, 1984, 19 (02): : 149 - 154
- [47] Photovoltaic edge-effect in planar GaAs MESFETs 17TH CONGRESS OF THE INTERNATIONAL COMMISSION FOR OPTICS: OPTICS FOR SCIENCE AND NEW TECHNOLOGY, PTS 1 AND 2, 1996, 2778 : 955 - 956
- [48] SIMULATION OF SURFACE-STATE DYNAMICS ON GAAS-MESFETS EUROPEAN TRANSACTIONS ON TELECOMMUNICATIONS, 1990, 1 (04): : 393 - 400
- [49] The effect of gate recess width on the linearity of GaAs MESFETs 1997 WIRELESS COMMUNICATIONS CONFERENCE, PROCEEDINGS, 1997, : 126 - 128