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- [1] EFFECT OF SURFACE-PROPERTIES ON ELECTRICAL PARAMETERS OF GAAS-MESFETS ANNALES DES TELECOMMUNICATIONS-ANNALS OF TELECOMMUNICATIONS, 1985, 40 (3-4): : 83 - 87
- [2] EFFECTS OF DEEP LEVELS IN GaAs MESFETs. Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 44 - 49
- [5] Automatic Measurement of Noise Parameters of Microwave MESFETs. Annales des Telecommunications/Annals of Telecommunications, 1988, 43 (5-6): : 323 - 329
- [8] GATE-BIAS DEPENDENCE OF THE NOISE SPECTRUM OF GaAs MESFETs. Transactions of the Institute of Electronics and Communication Engineers of Japan. Section E, 1986, E69 (04): : 291 - 293
- [9] MILLIMETRE-WAVE FREQUENCY DOUBLERS USING GaAs MESFETS. Annual Review - Philips Research Laboratories, 1986, : 108 - 110