SELECTIVE SILICON EPITAXIAL GROWTH FOR DEVICE-ISOLATION TECHNOLOGY.

被引：47
|
作者：
Ishitani, Akihiko [1 ]
Kitajima, Hiroshi [1 ]
Tanno, Kohetsu [1 ]
Tsuya, Hideki [1 ]
机构：
[1] NEC, Kawasaki, Jpn, NEC, Kawasaki, Jpn
来源：
Microelectronic Engineering | 1986年 / 4卷 / 01期
关键词：
D O I：
10.1016/0167-9317(86)90003-1
中图分类号：
学科分类号：
摘要：
36
引用
收藏
页码：3 / 33
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