Piezoelectric properties of La-doped PbTiO3 films for RF resonators

被引：0
|
作者：
Yamada, Akira [1 ]
Maeda, Chisako [1 ]
Uchikawa, Fusaoki [1 ]
Misu, Koichiro [2 ]
Honma, Toshihiko [3 ]
机构：
[1] Advanced Technology R and D Center, Mitsubishi Electric Corp., Sagamihara, Kanagawa 229-1195, Japan
[2] Info. Technology R and D Center, Mitsubishi Electric Corp., Kamakura, Kanagawa 247-0056, Japan
[3] SPC Electronics Corp., Shibasaki, Chofu, Tokyo 182-8602, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1999年 / 38卷 / 9 B期
关键词：
Theoretical; (THR); -; Experimental; (EXP);
D O I：
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中图分类号：
学科分类号：
摘要：
Bulk acoustic wave (BAW) resonators with 5-wt%-La2O3-doped PbTiO3 (PT) piezoelectric films were fabricated. The La-doped PT films had a dense, homogeneous morphology, as well as high crystallinity caused by the use of bottom electrodes with pure Pt-like surface layers. These PT films had remanent polarization of 110 mC/m2 at 200 °C. Resonant frequencies of the fabricated devices were 1.4 GHz and 2.0 GHz. The electromechanical coupling coefficient (kt2) was estimated to be 11% at 1.4 GHz and 9.4% at 2.0 GHz, respectively. The PT films had superior kt2 in the GHz band. The capability of the RF devices with broad bandwidth was investigated.
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页码：5520 / 5523
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