REFRACTORY-METAL SILICIDE FORMATION WITH E-BEAM AND LASER PULSES.

被引：0
|
作者：
D'Anna, E. [1 ]
Leggieri, G. [1 ]
Luches, A. [1 ]
Majni, G. [1 ]
机构：
[1] Univ di Lecce, Lecce, Italy, Univ di Lecce, Lecce, Italy
来源：
Vide, les Couches Minces | 1987年 / 42卷 / 236期
关键词：
ELECTRON BEAMS - Applications - HEAT TREATMENT - Annealing - LASER PULSES - Applications - SEMICONDUCTING SILICON - Substrates - TITANIUM COMPOUNDS - Thin Films;
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摘要：
Thin films of Mo and Ti have been deposited on single-crystalline Si (c-Si), amorphous Si (a-Si), and SiO//2 substrates and subjected to laser and electron-beam pulses. The aim is to study the response of these films to annealing. The focus is on the stability of these structures, the minimum fluence (or temperature) at which mixing or reaction start, and the thermal stability of the reacted layers. The irradiated samples were studied using Rutherford backscattering spectroscopy (RBS) with 2 MeV **4He** plus particles. The results are presented and discussed.
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页码：67 / 69
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