REFRACTORY-METAL SILICIDE FORMATION WITH E-BEAM AND LASER PULSES.

被引：0
|
作者：
D'Anna, E. [1 ]
Leggieri, G. [1 ]
Luches, A. [1 ]
Majni, G. [1 ]
机构：
[1] Univ di Lecce, Lecce, Italy, Univ di Lecce, Lecce, Italy
来源：
Vide, les Couches Minces | 1987年 / 42卷 / 236期
关键词：
ELECTRON BEAMS - Applications - HEAT TREATMENT - Annealing - LASER PULSES - Applications - SEMICONDUCTING SILICON - Substrates - TITANIUM COMPOUNDS - Thin Films;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Thin films of Mo and Ti have been deposited on single-crystalline Si (c-Si), amorphous Si (a-Si), and SiO//2 substrates and subjected to laser and electron-beam pulses. The aim is to study the response of these films to annealing. The focus is on the stability of these structures, the minimum fluence (or temperature) at which mixing or reaction start, and the thermal stability of the reacted layers. The irradiated samples were studied using Rutherford backscattering spectroscopy (RBS) with 2 MeV **4He** plus particles. The results are presented and discussed.
引用
收藏
页码：67 / 69
相关论文
共 50 条
  • [1] REFRACTORY-METAL SILICIDE FORMATION WITH E-BEAM AND LASER-PULSES
    DANNA, E
    LEGGIERI, G
    LUCHES, A
    MAJNI, G
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1987, 42 (236): : 67 - 69
  • [2] REFRACTORY-METAL SILICIDE FORMATION BY SPUTTERING A REFRACTORY-METAL ON HEATED SI SUBSTRATES
    TANIELIAN, M
    BLACKSTONE, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 714 - 717
  • [3] SILICIDE FORMATION BY LASER-HEATING OF SPUTTERED REFRACTORY-METAL FILMS ON SILICON
    MOHAMMADI, F
    SARASWAT, KC
    BEAUDOUIN, J
    MEINDL, JD
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (03) : C124 - C124
  • [4] REFRACTORY-METAL SILICIDE FORMATION INDUCED BY AS+ IMPLANTATION
    TSAI, MY
    PETERSSON, CS
    DHEURLE, FM
    MANISCALCO, V
    APPLIED PHYSICS LETTERS, 1980, 37 (03) : 295 - 298
  • [5] REFRACTORY-METAL SILICIDE FORMATION BY ION-IMPLANTATION
    WANG, KL
    CHIANG, SW
    BACON, F
    REIHL, RF
    THIN SOLID FILMS, 1980, 74 (02) : 239 - 244
  • [6] REFRACTORY-METAL SILICIDE FORMATION BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING
    KWONG, DL
    MEYERS, DC
    ALVI, NS
    LI, LW
    NORBECK, E
    APPLIED PHYSICS LETTERS, 1985, 47 (07) : 688 - 691
  • [7] MATERIAL REACTION AND SILICIDE FORMATION AT THE REFRACTORY-METAL SILICON INTERFACE
    RUBLOFF, GW
    TROMP, RM
    VANLOENEN, EJ
    APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1600 - 1602
  • [8] LASER-ANNEALED REFRACTORY-METAL SILICIDE FILMS ON GAAS
    ANDERSON, WT
    CHRISTOU, A
    THOMPSON, PE
    GOSSETT, CR
    ERIDON, JM
    HATZOPOULOS, Z
    EFTHIMIOPOULOS, T
    KUDUMAS, M
    MICHELAKIS, C
    MORGAN, DV
    ELECTRONICS LETTERS, 1990, 26 (01) : 62 - 64
  • [9] REFRACTORY-METAL SILICIDE FORMATION BY RAPID PROCESSING OF A GLOW-DISCHARGE ELECTRON-BEAM
    DU, YC
    LU, Z
    YU, ZQ
    SUN, DC
    LI, FM
    COLLINS, GJ
    CHINESE PHYSICS, 1986, 6 (01): : 208 - 214
  • [10] SILICON-CARBIDE FORMATION WITH E-BEAM AND LASER-PULSES
    DANNA, E
    LEGGIERI, G
    LUCHES, A
    NASSISI, V
    PERRONE, A
    MAJNI, G
    MENGUCCI, P
    APPLIED SURFACE SCIENCE, 1989, 36 (1-4) : 500 - 510
12345