PASSIVATION OF LASER INDUCED DEFECTS IN SILICON BY LOW ENERGY HYDROGEN ION IMPLANTATION.

被引：0

作者：

Slaoui, A. ^{[1
]}

Barhdadi, A. ^{[1
]}

Muller, J.C. ^{[1
]}

Siffert, P. ^{[1
]}

机构：

[1] Cent de Recherches Nucleaires, Strasbourg, Fr, Cent de Recherches Nucleaires, Strasbourg, Fr

来源：

Applied Physics A: Solids and Surfaces | 1986年 / A39卷 / 03期

关键词：

HEAT TREATMENT - Annealing - HYDROGEN - LASER BEAMS - Effects - RADIATION DAMAGE;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

It is well established that the pulsed-laser annealing of as-implanted Si introduces electrically active defects. The aim of this paper is to show that these defects can be neutralized by low-energy hydrogen ion implantation. The techniques used for the sample characterization are current-voltage measurements and capacitance transient spectroscopy.

引用

页码：159 / 162

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