PASSIVATION OF LASER INDUCED DEFECTS IN SILICON BY LOW ENERGY HYDROGEN ION IMPLANTATION.

被引：0
|
作者：
Slaoui, A. [1 ]
Barhdadi, A. [1 ]
Muller, J.C. [1 ]
Siffert, P. [1 ]
机构：
[1] Cent de Recherches Nucleaires, Strasbourg, Fr, Cent de Recherches Nucleaires, Strasbourg, Fr
来源：
Applied Physics A: Solids and Surfaces | 1986年 / A39卷 / 03期
关键词：
HEAT TREATMENT - Annealing - HYDROGEN - LASER BEAMS - Effects - RADIATION DAMAGE;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is well established that the pulsed-laser annealing of as-implanted Si introduces electrically active defects. The aim of this paper is to show that these defects can be neutralized by low-energy hydrogen ion implantation. The techniques used for the sample characterization are current-voltage measurements and capacitance transient spectroscopy.
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页码：159 / 162
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