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- [41] EFFECTIVENESS OF AN EXCESS CHARGE IN THE PROCESS OF TURN ON OF P-N-P-N STRUCTURES IN MULTIDIMENSIONAL APPROXIMATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (07): : 806 - 810
- [42] MULTITERMINAL P-N-P-N SWITCHES PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1958, 46 (06): : 1236 - 1239
- [43] P-N-P-N TRANSISTOR SWITCHES PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1956, 44 (09): : 1174 - 1182
- [45] NEW WAY FOR REDUCING TURN-OFF TIME OF HIGH-VOLTAGE P-N-P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (07): : 1236 - &
- [46] MECHANISM OF PROPAGATION OF TURNED-ON STATE IN A P-N-P-N STRUCTURE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (09): : 1582 - 1584
- [47] SIMPLE MODEL FOR PROPAGATION OF ON STATE ALONG A P-N-P-N STRUCTURE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (06): : 978 - &
- [49] SWITCHING A SYMMETRICAL P-N-P-N STRUCTURE WHEN DEPENDENCE OF AMPLIFICATION FACTORS ON CURRENT IS TAKEN INTO A ACCOUNT RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1967, 12 (05): : 830 - &