TURN-ON OF A P-N-P-N STRUCTURE AT A HIGH CURRENT DENSITY.

被引：0

作者：

Kuz'min, V.A.

Pavlik, V.Ya.

Radov, V.I.

机构：

来源：

Radio Engineering and Electronic Physics (English translation of Radiotekhnika i Elektronika) | 1973年 / 17卷 / 01期

关键词：

P-N-P-N STRUCTURES - TURN-ON PROCESS;

D O I：

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学科分类号：

摘要：

The transient turn-on process of the p-n-p-n structure is discussed, taking into consideration the effect of the electric field in the wide base region. The calculation is performed by the charging method until a high injection level into the wide n-base is reached. The dependence of the electric field intensity in the n-base on the coordinate and time agrees with the results of experimental work.

引用

页码：111 / 117

共 50 条

[1] TURN-ON CRITERION FOR P-N-P-N DEVICES
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