Irradiation damage in SiO2/Si system induced by photons and/or ions in photo-oxidation and plasma-oxidation

被引：0

作者：

Okamoto, Tetsuya ^{[1
,2
]}

Ide, Tetsuya ^{[1
]}

Sasaki, Atsushi ^{[1
]}

Azuma, Kazufumi ^{[1
]}

Nakata, Yukihiko ^{[1
,3
]}

机构：

[1] Adv. LCD Technol. Devmt. Ctr. Co. L., 292 Yoshida-cho, Totsuka-ku, Yokohama 244-0817, Japan

[2] Sharp Corporation, Display Technol. Development Groups

[3] Ritsumeikan Asia Pacific University

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2004年 / 43卷 / 12期

关键词：

Irradiation - Krypton - Microwaves - Photons - Photooxidation - Plasma enhanced chemical vapor deposition - Surface waves - Thin film transistors;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Irradiation damage in an SiO2/Si system induced by photons and/or ions was evaluated. The flat-band voltage (Vfb) was not shifted and the interface density of states (Dit) was increased by irradiation of 172-nm-wavelength light, which corresponds to a photo-oxidation condition. Surface wave plasma (SWP) excited using microwave with Kr gas has an electron temperature less than 1 eV. However, Vfb, was shifted and Dit was increased by the irradiation of photons from Kr plasma, which corresponds to a plasma-oxidation condition. Vfb was not shifted and Dit was increased by the irradiation of ions from Kr plasma. However, the SiO2/Si interface formed by photo-oxidation had a Dit of 3 × 1010 cm-2eV-1, which is equal to that of a SiO2/Si interface formed by a thermal-oxidation. This means that photo-oxidation forms the SiO2/Si interface by a concerted reaction of the photo-oxidation and the irradiation.

引用

页码：8002 / 8006

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