Investigation of mask pattern proximity correction to reduce image shortening in x-ray lithography

被引：0
|
作者：
Motorola Advanced Products Research, and Development Lab, Austin, United States [1 ]
机构：
来源：
Microelectron Eng | / 271-274期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Feedforward correction of mask image placement for proximity electron lithography
    Omori, S
    Nohdo, S
    Motohashi, T
    Kitagawa, T
    Susa, T
    Yotsui, K
    Itoh, K
    Tamura, A
    PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY XI, 2004, 5446 : 906 - 914
  • [22] PROXIMITY EFFECT CORRECTION FOR 1/1 X-RAY MASK FABRICATION
    AYA, S
    MORIIZUMI, K
    FUJINO, T
    KAMIYAMA, K
    MINAMI, H
    KISE, K
    YABE, H
    MARUMOTO, K
    MATSUI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (12B): : 6976 - 6982
  • [23] Characterization of pattern geometrical effect on line end shortening in x-ray lithography
    Yi, M
    Seo, Y
    Seo, E
    Yang, J
    Lee, K
    Choi, BK
    Kim, O
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (06): : 3515 - 3520
  • [24] Algorithm for analyzing optimal mask movement pattern in moving mask deep X-ray lithography
    Matsuzuka, N
    Tabata, O
    MHS2002: PROCEEDINGS OF THE 2002 INTERNATIONAL SYMPOSIUM ON MICROMECHATRONICS AND HUMAN SCIENCE, 2002, : 159 - 164
  • [25] FABRICATION OF CARBON MEMBRANE X-RAY MASK FOR X-RAY LITHOGRAPHY
    Noda, Daiji
    Takahashi, Naoki
    Tokuoka, Atsushi
    Katori, Megumi
    Hattori, Tadashi
    PROCEEDINGS OF THE ASME INTERNATIONAL MECHANICAL ENGINEERING CONGRESS AND EXPOSITION (IMECE 2010), VOL 10, 2012, : 279 - 283
  • [26] Proximity correction simulations in ultra-high resolution x-ray lithography
    Bourdillon, AJ
    Boothroyd, CB
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2001, 34 (22) : 3209 - 3213
  • [27] Characterization of proximity correction in 100-nm-regime X-ray lithography
    Yi, M
    Seo, E
    Seo, Y
    Lee, K
    Kim, O
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (12B): : 6824 - 6829
  • [28] PROXIMITY CORRECTION FOR ELECTRON-BEAM PATTERNING ON X-RAY MASK BLANKS
    REIMER, K
    PONGRATZ, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1603 - 1606
  • [29] SOURCE CHARACTERIZATION FOR X-RAY PROXIMITY LITHOGRAPHY
    GABEL, K
    RICHARDSON, M
    KADO, M
    VASSILIEV, A
    OPTICS LETTERS, 1994, 19 (24) : 2047 - 2049
  • [30] Proximity X-ray and extreme ultraviolet lithography
    Deguchi, K
    Haga, T
    COMPTES RENDUS DE L ACADEMIE DES SCIENCES SERIE IV PHYSIQUE ASTROPHYSIQUE, 2000, 1 (07): : 829 - 842
12345