Application of Ion Implantation to the Manufacture of Semiconductor Devices.

被引：0
|
作者：
Saczuk, Krzysztof
机构：
来源：
| 1600年 / 13期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
SEMICONDUCTOR DEVICE MANUFACTURE
引用
收藏
相关论文
共 50 条
  • [31] FUTURE DEMAND FOR GALLIUM ARSENIDE SEMICONDUCTOR DEVICES.
    Jones, S.
    Thomas, C.B.
    Wilshire, B.
    Metals and Materials (Institute of Metals), 1986, 2 (06): : 353 - 356
  • [32] THERMOSTAT FOR LOW-POWER SEMICONDUCTOR DEVICES.
    Kluikov, A.G.
    Lebedev, V.M.
    1978, 45 (10): : 634 - 635
  • [33] ION-IMPLANTED BUBBLE DEVICES.
    Yoshimi, Koichi
    1600, (10):
  • [34] THE USE OF ALUMINUM ION-IMPLANTATION FOR POWER SEMICONDUCTOR-DEVICES
    HALDER, E
    ROGGWILLER, P
    GOBRECHT, J
    PHYSICA SCRIPTA, 1989, 39 (03): : 406 - 409
  • [35] REQUIREMENTS OF ION IMPLANTATION TECHNOLOGY IN SEMICONDUCTOR DEVICES AND SOME NOVEL APPLICATIONS
    SAXENA, AN
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) : C104 - &
  • [36] Optimal grain structures for printed organic semiconductor devices.
    Katz, HE
    Kloc, C
    Bao, ZN
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2003, 226 : U398 - U398
  • [37] CHARACTERISTICS AND APPLICATION OF VACUUM SWITCHING DEVICES.
    Speedy, J.P.
    Transactions of the South African Institute of Electrical Engineers, 1980, 71 (pt 8): : 210 - 216
  • [38] Nondestructive Recording of Crystal Lattice Defects in Semiconductor Devices.
    Grienauer, Heinrich
    Mayer, Kurt
    Siemens-Zeitschrift, 1976, 50 (02): : 116 - 121
  • [39] NUMERICAL METHOD FOR THE DETERMINATION OF THE TRANSIENT RESPONSE OF SEMICONDUCTOR DEVICES.
    Griffin, P.D.
    Marques, J.
    Engineering computations, 1985, 2 (04) : 314 - 318
  • [40] HIGH VOLTAGE NANOSECOND PULSE CIRCUITS WITH SEMICONDUCTOR DEVICES.
    Li, Jinlin
    Zhou, Xuan
    Bao, Bingqian
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1985, 6 (04): : 350 - 354
12345