'Oxidation of Ge implanted Si; electrical properties'

被引:0
|
作者
Turan, R.
Finstad, T.G.
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] ELECTRICAL-PROPERTIES OF GE-IMPLANTED AND OXIDIZED SI
    TURAN, R
    FINSTAD, TG
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (01) : 75 - 81
  • [2] STRUCTURAL AND ELECTRICAL-PROPERTIES OF B-IMPLANTED AND GE-IMPLANTED SI
    TURAN, R
    HUGSTED, B
    LONSJO, OM
    FINSTAD, TG
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (03) : 1155 - 1158
  • [3] Thermal oxidation of As and Ge implanted Si(100)
    Colonna, S
    Terrasi, A
    Scalese, S
    Iacona, F
    Raineri, V
    La Via, F
    Mobilio, S
    SURFACE SCIENCE, 2003, 532 : 746 - 753
  • [4] STRUCTURAL AND ELECTRICAL-PROPERTIES OF GE-ION-IMPLANTED SI LAYER
    KURIYAMA, K
    AOKI, S
    SATOH, M
    NAKANO, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 397 - 399
  • [5] STRUCTURAL AND ELECTRICAL-PROPERTIES OF SI LAYERS IMPLANTED WITH VARIOUS GE ION DOSES
    KURIYAMA, K
    TSUGITA, M
    HAYASHI, N
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 1116 - 1119
  • [6] Structural and electrical properties of In-implanted Ge
    Feng, R.
    Kremer, F.
    Sprouster, D. J.
    Mirzaei, S.
    Decoster, S.
    Glover, C. J.
    Medling, S. A.
    Russo, S. P.
    Ridgway, M. C.
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (16)
  • [7] Thermal oxidation of Ge-implanted Si: Role of defects
    Dedyulin, S. N.
    Goncharova, L. V.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 272 : 334 - 337
  • [8] NATURE OF INTERFACES AND OXIDATION PROCESSES IN GE+-IMPLANTED SI
    SRIVATSA, AR
    SHARAN, S
    HOLLAND, OW
    NARAYAN, J
    JOURNAL OF APPLIED PHYSICS, 1989, 65 (10) : 4028 - 4032
  • [9] ELECTRICAL-PROPERTIES OF B-ION-IMPLANTED SI LAYER PREAMORPHIZED BY GE IONS
    KURIYAMA, K
    AOKI, S
    SATOH, M
    KUREBAYASHI, M
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (04) : 1876 - 1878
  • [10] ELECTRICAL PROPERTIES OF DISLOCATIONS IN GE AND SI
    SCHROTER, W
    LABUSCH, R
    PHYSICA STATUS SOLIDI, 1969, 36 (02): : 539 - &