共 50 条
- [4] STRUCTURAL AND ELECTRICAL-PROPERTIES OF GE-ION-IMPLANTED SI LAYER NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 397 - 399
- [5] STRUCTURAL AND ELECTRICAL-PROPERTIES OF SI LAYERS IMPLANTED WITH VARIOUS GE ION DOSES NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 1116 - 1119
- [7] Thermal oxidation of Ge-implanted Si: Role of defects NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 272 : 334 - 337
- [10] ELECTRICAL PROPERTIES OF DISLOCATIONS IN GE AND SI PHYSICA STATUS SOLIDI, 1969, 36 (02): : 539 - &