共 50 条
- [1] LASER-OSCILLATING-MODE DEPENDENCE OF TEMPERATURE DISTRIBUTIONS IN LASER ANNEALING OF SEMICONDUCTORS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10): : 1546 - 1552
- [2] EFFICIENCY OF LASER DOPING OF SEMICONDUCTORS. Soviet physics. Semiconductors, 1984, 18 (09): : 1062 - 1063
- [5] MEASUREMENTS OF THE MELT DYNAMICS IN LASER ANNEALED SEMICONDUCTORS. Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 116 B&C (1-3): : 558 - 563
- [7] LASER ANNEALING OF AIIIBV SEMICONDUCTORS DOKLADY AKADEMII NAUK SSSR, 1983, 268 (03): : 594 - 597
- [8] PULSED LASER ANNEALING OF SEMICONDUCTORS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 224 - 225
- [9] LASER ANNEALING OF IMPLANTED SEMICONDUCTORS IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1981, 45 (08): : 1464 - 1473
- [10] INTERFERENCE LASER ANNEALING OF SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (02): : 152 - 155