Effect of plasma etching and sacrificial oxidation on 4H-SiC Schottky barrier diodes

被引：0
|
作者：
Morrison, D.J. [1 ]
Pidduck, A.J. [2 ]
Moore, V. [3 ]
Wilding, P.J. [2 ]
Hilton, K.P. [2 ]
Uren, M.J. [2 ]
Johnson, C.M. [1 ]
机构：
[1] Dept. of Elec. and Electron. Eng., University of Newcastle, Newcastle NE1 7RU, United Kingdom
[2] DERA Def. Res. and Evaluation Agency, Malvern, Worcs. WR14 3PS, United Kingdom
[3] Def. Eval. and Research Agency DERA, Farnborough, Hampshire, GU14 6TD, United Kingdom
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Electric current measurement - Interfaces (materials) - MESFET devices - Metallizing - Oxidation - Plasma etching - Schottky barrier diodes - Semiconducting silicon compounds - Voltage measurement - X ray photoelectron spectroscopy;
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摘要：
In devices such as recess gate MESFETs and in SITs, the Schottky gate is formed on a plasma etched surface. The quality of this interface is crucial to the performance of these devices. This study considers sacrificial oxidation as a post-etch, pre-metallization treatment for SiC Schottky diodes. Current-voltage and X-ray Photoelectron Spectroscopy measurements are used to determine the effect of two different sacrificial oxidation methods on plasma etched and unetched n-type 4H-SiC.
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