RADIATIVE RECOMBINATION SPECTRA OF PLASTICALLY DEFORMED GALLIUM SELENIDE.

An electron-microscopic study was made of samples of gallium selenide, which is a layer semiconductor. These samples were deformed plastically by the four-point bending method at 300 and 4. 2 K. Slip bands corresponding to motion of dislocations in pyramidal planes were observed in the samples deformed at 4. 2 K. Both basal and pyramidal plastic flow altered the luminescence spectrum of gallium selenide. The motion of basal dislocations gave rise to defects which captured excitons with a binding energy of 17 mev, whereas pyramidal flow produced defects that gave rise to strong long-wavelength lines in the luminescence spectrum.