Low temperature molecular beam epitaxy of Al(Ga)InAs on InP and its application to high electron mobility transistor structures

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作者：
Kunzel, H. [1 ]
Bottcher, J. [1 ]
Hase, A. [1 ]
Heedt, C. [1 ]
Hoenow, H. [1 ]
机构：
[1] Heinrich-Hertz-Inst fur, Nachrichtentechnik Berlin G.m.b.H., Berlin, Germany
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1993年 / B22卷 / 01期
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页码：89 / 92
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