Properties of GaSb substrate wafers for MOCVD III-V antimonide

被引：0
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作者：
Peng, Ruiwu [1 ]
Ding, Yongqing [1 ]
Xu, Chenmei [1 ]
Wang, Zhanguo [1 ]
机构：
[1] Shanghai Inst of Metallurgy, Chinese Acad of Sciences, Shanghai, China
来源：
Rare Metals | 1998年 / 17卷 / 02期
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页码：161 / 165
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