NEW CMOS NEGATIVE RESISTANCE DEVICE.

被引：0

作者：

MINGGUANG, YI

机构：

来源：

| 1982年 / V 3卷 / N 5期

关键词：

COMPLEMENTARY MOS - NEGATIVE RESISTANCEDEVICES;

D O I：

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学科分类号：

摘要：

A NEW STRUCTURE IS PROPOSED FOR THE IMPLEMENTATION OF CURRENT-CONTROLLED NEGATIVE RESISTANCE DEVICES IN STANDARD CMOS TECHNOLOGY. A THEORETICAL ANALYSIS OF THIS DEVICE IS PRESENTED AND THE EXPERIMENTAL RESULTS SHOW AGREEMENT WITH IT. IN CHINESE WITH ENGLISH ABSTRACT.

引用

页码：376 / 384

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