Ellipsometric studies of indium tin oxide films deposited by sol-gel process

被引：0

作者：

Stoica, T.F. ^{[1
]}

Gartner, M. ^{[1
]}

Stoica, T.A. ^{[1
]}

Zaharescu, M. ^{[1
]}

机构：

[1] Natl Inst of Materials Physics, Bucharest, Romania

来源：

Proceedings of the International Semiconductor Conference, CAS | 1999年 / 1卷

关键词：

Density (optical) - Ellipsometry - Metallorganic chemical vapor deposition - Refractive index - Semiconducting indium compounds - Silicon - Sol-gels - Substrates;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Samples of indium tin oxide layers on silicon substrate have been performed by sol-gel procedure. In and Sn metallo-organic precursors have been used for successive depositions of ITO layers. Ellipsometric measurements and a fitting EMA procedure have been used in order to find out the optical constants and composition of the ITO films. The void density depends on the solution type and the number of successive depositions. By the increase of the depositions number, a decrease of the void density was observed. The refractive index decreases function on void density.

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页码：381 / 384

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